Modulation of MoSH/WSi<sub>2</sub>N<sub>4</sub> Schottky-junction barrier by external electric field and biaxial strain

In view of the newly synthesized two-dimensional (2D) semiconductor material WSi<sub>2</sub>N<sub>4</sub> (WSN) and 2D metal MoSH (MSH), a metal-semiconductor MSH/WSN Schottky-junction is constructed in this work. practical applications contact, presence Schottky barrier degrades device performance severely. Therefore, it crucial to obtain smaller height or even an Ohmic contact. Here, first-principles calculations are used investigate variation under external electric field biaxial strain. The results show that both strain can effectively modulate Schottky-junction. dynamic switching between p-type contact n-type be achieved action positive Under negative field, modulated realize transition from large also induce This work may provide theoretical guidance for WSN based functional devices field-effect transistors.